Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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JANTXV1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
7,107 | 0.00 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 200°C |
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JANTXV1N4944DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
9,898 | 9.60 |
|
![]() Datasheet |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
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JAN1N5554USDIODE GEN PURP 1KV 5A D-5B Microchip Technology |
2,169 | 9.68 |
|
![]() Datasheet |
- | SQ-MELF, E | Bulk | Active | Standard | 1000 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
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JAN1N5553USDIODE GEN PURP 800V 3A D-5B Microchip Technology |
3,151 | 22.44 |
|
![]() Datasheet |
- | SQ-MELF, E | Bulk | Active | Standard | 800 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
1N5419E3DIODE GEN PURP 500V 3A AXIAL Microchip Technology |
7,250 | 0.00 |
|
![]() Datasheet |
- | B, Axial | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5418/TRDIODE GEN PURP 400V 3A Microchip Technology |
5,101 | 9.63 |
|
![]() Datasheet |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N5554US/TRDIODE GEN PURP 1KV 3A D-5B Microchip Technology |
5,235 | 8.76 |
|
![]() Datasheet |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 1000 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
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JANTX1N5623US/TRDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
8,874 | 9.63 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | 15pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JAN1N5622USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
8,689 | 9.66 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
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1N5804USE3DIODE GEN PURP 100V 1A A SQ-MELF Microchip Technology |
9,459 | 8.78 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |