Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N5805USDIODE GEN PURP 135V 1A D-5A Microchip Technology |
2,755 | 0.00 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 135 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N5550DIODE GEN PURP 200V 5A AXIAL Microchip Technology |
9,635 | 9.25 |
|
![]() Datasheet |
- | B, Axial | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N5189/TRDIODE GEN PURP 500V 3A B AXIAL Microchip Technology |
5,911 | 9.27 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N5188/TRDIODE GEN PURP 400V 3A AXIAL Microchip Technology |
6,652 | 9.27 |
|
![]() Datasheet |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JAN1N3595AUSDIODE GEN PURP 125V 150MA DO35 Microchip Technology |
5,525 | 9.30 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | Military | MIL-PRF-19500/241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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JAN1N3595USDIODE GEN PURP 125V 4A B SQ-MELF Microchip Technology |
5,671 | 9.30 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 125 V | 4A | 1 V @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | - | - | Military | MIL-PRF-19500/241 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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JANTXV1N5186DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
9,779 | 9.30 |
|
![]() Datasheet |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
5,665 | 9.24 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | - | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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1N6641USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
5,544 | 8.48 |
|
![]() Datasheet |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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JANTX1N5802DIODE GEN PURP 50V 1A AXIAL Microchip Technology |
8,722 | 12.50 |
|
- |
- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |