Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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1N5418E3/TRDIODE GEN PURP 400V 3A B AXIAL Microchip Technology |
2,950 | 8.91 |
|
![]() Datasheet |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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1N5419E3/TRDIODE GEN PURP 500V 3A Microchip Technology |
4,944 | 8.91 |
|
![]() Datasheet |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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UT4010DIODE GEN PURP 100V 4A B Microchip Technology |
5,869 | 0.00 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | - | - | - | Through Hole | B | -195°C ~ 175°C |
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JAN1N5622US/TRDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
2,245 | 9.81 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
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JANTXV1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,257 | 23.24 |
|
![]() Datasheet |
- | B, Axial | Bulk | Discontinued at Digi-Key | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5614US/TRDIODE GEN PURP 200V 1A D-5A Microchip Technology |
4,552 | 9.82 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
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1N5804USE3/TRDIODE GEN PURP 100V 1A A SQ-MELF Microchip Technology |
2,458 | 8.94 |
|
![]() Datasheet |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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JAN1N5711UR-1DIODE SCHOTTKY 70V 33MA DO213AA Microchip Technology |
3,902 | 9.75 |
|
![]() Datasheet |
- | DO-213AA | Bulk | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
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JANTX1N5621USDIODE GEN PURP 800V 1A D-5A Microchip Technology |
8,446 | 9.75 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 800 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N5623DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
9,322 | 9.75 |
|
![]() Datasheet |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |