Introduction

In the dynamic realm of electronic components, the MMBF170LT3G emerges as a remarkable miniature transistor. Tailored to meet the evolving demands of modern electronics, this device offers a unique blend of characteristics that make it a favored choice for various applications.
Physical and Electrical Features
Physical Attributes

Compact Surface - Mount Package
The MMBF170LT3G comes in a compact surface - mount package. This design is a boon for modern circuit boards where space optimization is crucial. Whether it's in a sleek smartphone, a tiny wearable device, or a compact IoT module, its small footprint allows for efficient use of the limited PCB real - estate. This not only enables the integration of more components but also contributes to the overall miniaturization of the end - product.
Electrical Characteristics

Low - Power Consumption
One of the most significant features of the MMBF170LT3G is its ability to operate with extremely low power consumption. In an era where battery - powered devices are ubiquitous, this trait is invaluable. For instance, in a wireless sensor node that relies on a small battery for long - term operation, the MMBF170LT3G can perform its functions, such as signal amplification and switching, while consuming minimal power. This extends the battery life of the device, reducing the need for frequent recharging or battery replacements.
High - Frequency Response
The MMBF170LT3G is engineered to handle high - frequency signals with exceptional efficiency. It has a high cut - off frequency (
f 
T
 
), which means it can effectively process signals in the radio - frequency (RF) spectrum. In applications like RF receivers and transmitters, this high - frequency performance is essential. For example, in a Bluetooth or Wi - Fi module, the MMBF170LT3G can amplify weak incoming RF signals or modulate outgoing signals for transmission, ensuring reliable wireless communication.
Low Noise Figure
The transistor exhibits a low noise figure, a critical characteristic for signal - sensitive applications. In audio pre - amplifiers or low - noise amplifiers (LNAs) in communication systems, minimizing noise addition is paramount. The MMBF170LT3G adds minimal noise to the signals it processes, resulting in a high signal - to - noise ratio. This ensures that the output signal remains clean and undistorted, enhancing the overall performance of the circuit.
Applications
Consumer Electronics

Audio Devices
In portable audio devices such as earbuds and compact speakers, the MMBF170LT3G plays a vital role in the audio amplification chain. Its low - power operation helps in conserving battery power, which is crucial for these battery - powered devices. At the same time, its low noise figure ensures high - quality sound reproduction. It can take the weak audio signals from a music - playing device and amplify them to a level suitable for driving the speakers, delivering clear and immersive audio.
Remote Controls
Remote controls for TVs, gaming consoles, and other consumer electronics often utilize infrared (IR) or radio - frequency (RF) communication. The MMBF170LT3G can be integrated into the transmitter or receiver circuits. In the transmitter, it can amplify the control signals before they are sent out, ensuring a strong and reliable signal. In the receiver, it can boost the weak incoming signals, enabling accurate decoding of the control commands.
Wireless Communication

Mobile Phones
In mobile phones, the MMBF170LT3G is an integral part of the RF front - end. It functions as a low - noise amplifier to boost the weak RF signals received from the antenna. Given the high - frequency nature of modern mobile communication standards like 5G, the MMBF170LT3G's ability to handle these frequencies with low noise and power consumption is essential. It also aids in the transmit path, where it helps in modulating and amplifying the signals to be sent out, ensuring seamless communication.
Wireless Sensor Networks (WSNs)
In WSNs, where sensor nodes need to communicate wirelessly over short distances, the MMBF170LT3G is well - suited for use in the transceiver circuits. These nodes often operate on battery power for extended periods. The MMBF170LT3G's low - power consumption ensures that the nodes can function for long durations without frequent battery replacements. Its high - frequency performance enables efficient signal processing for data transmission and reception, facilitating reliable communication within the network.
Conclusion

The MMBF170LT3G miniature transistor is a powerful tool in the hands of electronic designers. Its unique combination of compact size, low - power operation, high - frequency performance, and low noise figure makes it suitable for a wide range of applications across consumer electronics and wireless communication. As technology continues to advance and the demand for more efficient, compact, and high - performing electronic devices grows, the MMBF170LT3G is likely to play an even more significant role in future designs.

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Part Number	FDMS7680	FDC640P	FDMS7682	NTTFS005N04CTAG	FDMS7698
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Series	-	-	-	-	-
Package/Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)	500mA (Ta)	500mA (Ta)	500mA (Ta)	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 10V	5Ohm @ 200mA, 10V	5Ohm @ 200mA, 10V	5Ohm @ 200mA, 10V	5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA	3V @ 1mA	3V @ 1mA	3V @ 1mA	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-	-
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 10 V	60 pF @ 10 V	60 pF @ 10 V	60 pF @ 10 V	60 pF @ 10 V
FET Feature	-	-	-	-	-
Power Dissipation (Max)	225mW (Ta)	225mW (Ta)	225mW (Ta)	225mW (Ta)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Grade	-	-	-	-	-
Qualification	-	-	-	-	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)