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Infineon Technologies IDW10G65C5XKSA1

Part No.:
IDW10G65C5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-247-3
Datasheet:
Chuangxin CloudIDW10G65C5XKSA1.pdf
Description:
DIODE SIL CARB 650V 10A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Product details

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
180 µA @ 650 V
Capacitance @ Vr, F:
300pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3
Operating Temperature - Junction:
-55°C ~ 175°C
Datasheet:
Chuangxin CloudIDW10G65C5XKSA1.pdf

Inventory:232

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