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Infineon Technologies FF8MR12W2M1B11BOMA1

Part No.:
FF8MR12W2M1B11BOMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
Chuangxin CloudFF8MR12W2M1B11BOMA1.pdf
Description:
MOSFET 2N-CH 1200V AG-EASY2BM-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Product details

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
Module
Packaging:
Tray
Product Status:
Obsolete
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
150A (Tj)
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id:
5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs:
372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
11000pF @ 800V
Power - Max:
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
AG-EASY2BM-2
Datasheet:
Chuangxin CloudFF8MR12W2M1B11BOMA1.pdf

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