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Diodes Incorporated DMG1016UDW-7

Part No.:
DMG1016UDW-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
Chuangxin CloudDMG1016UDW-7.pdf
Description:
MOSFET N/P-CH 20V SOT363
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
Payment
Shipping:
Shipping

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Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.07A, 845mA
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
60.67pF @ 10V
Power - Max:
330mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363
Datasheet:
Chuangxin CloudDMG1016UDW-7.pdf

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6. What is the process for return or replacement of DMG1016UDW-7?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the DMG1016UDW-7 we delivered, we will accept the replacement or return of the DMG1016UDW-7 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of DMG1016UDW-7.

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Two processes to return the products:

(1)Inform us within 90 days

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Image DMG1016UDW-7 DMG1016UDWQ-7
Part Number DMG1016UDW-7 DMG1016UDWQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Series - -
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 1.07A, 845mA 1.07A, 845mA
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V 0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 10V 60.67pF @ 10V
Power - Max 330mW 330mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-363 SOT-363
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