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Texas Instruments CSD86360Q5D

Part No.:
CSD86360Q5D
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Package:
8-PowerLDFN
Datasheet:
Chuangxin CloudCSD86360Q5D.pdf
Description:
MOSFET 2N-CH 25V 50A 8LSON
Quantity:

Unit Price:$0

Ext Price:$0

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Shipping:
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Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
50A
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
2060pF @ 12.5
Power - Max:
13W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-LSON (5x6)
Datasheet:
Chuangxin CloudCSD86360Q5D.pdf

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6. What is the process for return or replacement of CSD86360Q5D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the CSD86360Q5D we delivered, we will accept the replacement or return of the CSD86360Q5D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of CSD86360Q5D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as CSD86360Q5D pin diagram, CSD86360Q5D datasheet?

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Image CSD86360Q5D
Part Number CSD86360Q5D
Manufacturer Texas Instruments
Series NexFET™
Package/Case 8-PowerLDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 12.5
Power - Max 13W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-LSON (5x6)
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