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Texas Instruments CSD19506KTTT

Part No.:
CSD19506KTTT
Manufacturer:
Texas Instruments
Category:
FETs, MOSFETs
Package:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Datasheet:
Chuangxin CloudCSD19506KTTT.pdf
Description:
MOSFET N-CH 80V 200A DDPAK
Quantity:
Payment:
Payment
Shipping:
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Product details

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Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
156 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
12200 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (DDPAK-3)
Datasheet:
Chuangxin CloudCSD19506KTTT.pdf

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