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Cambridge GaN Devices CGD65B200S2-T13

Part No.:
CGD65B200S2-T13
Manufacturer:
Cambridge GaN Devices
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
Chuangxin CloudCGD65B200S2-T13.pdf
Description:
650V GAN HEMT, 200MOHM, DFN5X6.
Quantity:
Payment:
Payment
Shipping:
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Product details

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Product attributes
Attribute value
Manufacturer:
Cambridge GaN Devices
Series:
ICeGaN™
Package/Case:
8-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
-
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
9V, 20V
Rds On (Max) @ Id, Vgs:
280mOhm @ 600mA, 12V
Vgs(th) (Max) @ Id:
4.2V @ 2.75mA
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 12 V
Vgs (Max):
+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
Current Sensing
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)
Datasheet:
Chuangxin CloudCGD65B200S2-T13.pdf

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