Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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JAN1N6073DIODE GEN PURP 50V 850MA A-PAK Microchip Technology |
7,697 | 13.65 |
|
![]() Datasheet |
- | A, Axial | Bulk | Active | Standard | 50 V | 850mA | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 50 V | - | Military | MIL-PRF-19500/503 | Through Hole | A, Axial | -65°C ~ 155°C |
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JAN1N6621USDIODE GEN PURP 75V 200MA D-5A Microchip Technology |
9,765 | 13.65 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 2.8pF @ 1.5V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | D-5A | -65°C ~ 200°C |
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JAN1N6622USDIODE GEN PURP 660V 1.2A D-5A Microchip Technology |
2,259 | 13.65 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
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JAN1N6624USDIODE GEN PURP 990V 1A D-5A Microchip Technology |
9,037 | 13.65 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 990 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
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JAN1N6625USDIODE GEN PURP 1.1KV 1A D-5A Microchip Technology |
5,376 | 13.65 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 1100 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
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JANTXV1N5552USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
2,700 | 13.67 |
|
![]() Datasheet |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
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JANTXV1N5553DIODE GEN PURP 800V 5A AXIAL Microchip Technology |
3,062 | 13.55 |
|
![]() Datasheet |
- | B, Axial | Bulk | Active | Standard | 800 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N6627USDIODE GEN PURP 440V 1.75A A-MELF Microchip Technology |
5,209 | 12.32 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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1N6627UDIODE GEN PURP 400V 4A D-5B Microchip Technology |
6,861 | 13.14 |
|
- |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 4A | 1.5 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 400 V | - | - | - | Surface Mount | D-5B | - |
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JANTXV1N5623USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
8,678 | 13.57 |
|
![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |