Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6622/TRDIODE GEN PURP 600V 1.2A A-PAK Microchip Technology |
4,123 | 11.70 |
|
![]() Datasheet |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
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1N6621/TRDIODE GEN PURP 440V 1.2A Microchip Technology |
8,428 | 11.70 |
|
![]() Datasheet |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
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JANTXV1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
7,575 | 12.75 |
|
![]() Datasheet |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
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JAN1N6631/TRDIODE GEN PURP 1.1KV 1.4A Microchip Technology |
8,559 | 12.90 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1.4A | 1.6 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 2 µA @ 1100 V | - | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 175°C |
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JAN1N6628/TRDIODE GEN PURP 660V 1.75A Microchip Technology |
2,073 | 12.90 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.75A | 1.35 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 600 V | - | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 175°C |
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JAN1N6630/TRDIODE GEN PURP 900V 1.4A Microchip Technology |
6,688 | 12.90 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 900 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 2 µA @ 900 V | - | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
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JANTXV1N5616/TRDIODE GEN PURP 400V 1A Microchip Technology |
9,219 | 12.90 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
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1N6547DIODE RECT ULT FAST REC A-PKG Microchip Technology |
8,033 | 11.76 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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JANTXV1N3595USDIODE GEN PURP 125V 4A B SQ-MELF Microchip Technology |
5,897 | 20.12 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 125 V | 4A | 1 V @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | - | - | Military | MIL-PRF-19500/241 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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JANTX1N5420US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
4,171 | 13.01 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |