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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP171PH6327XTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
4,408 | 1.00 |
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Datasheet |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IPP040N06NAKSA1MOSFET N-CH 60V 20A/80A TO220-3 Infineon Technologies |
3,264 | 2.38 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 80A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 2.8V @ 50µA | 38 nC @ 10 V | ±20V | 2700 pF @ 30 V | - | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPA050N10NM5SXKSA1MOSFET N-CH 100V 66A TO220 Infineon Technologies |
4,302 | 1.88 |
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Datasheet |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 66A (Tc) | 6V, 10V | 5mOhm @ 33A, 10V | 3.8V @ 84µA | 68 nC @ 10 V | ±20V | 4700 pF @ 50 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPA60R190P6XKSA1MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies |
3,651 | 1.00 |
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Datasheet |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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GS61008T-MRGS61008T-MR Infineon Technologies Canada Inc. |
3,222 | 0.00 |
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- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 1.3V @ 7mA | 12 nC @ 6 V | +7V, -10V | 590 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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IMLT65R020M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
2,905 | 0.00 |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMW120R045M1XKSA1SICFET N-CH 1200V 52A TO247-3 Infineon Technologies |
4,598 | 24.04 |
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Datasheet |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | - | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 57 nC @ 15 V | +20V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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IPDQ60R007CM8XTMA1IPDQ60R007CM8XTMA1 Infineon Technologies |
2,517 | 0.00 |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 288A (Tc) | 10V | 7mOhm @ 100A, 10V | 4.7V @ 3.24mA | 370 nC @ 10 V | ±20V | 16385 pF @ 400 V | - | 1.249kW (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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ISP14EP15LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
587 | 0.87 |
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Datasheet |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 770mA (Ta), 1.29A (Tc) | 4.5V, 10V | 1.38Ohm @ 800mA, 10V | 2V @ 270µA | 11.6 nC @ 10 V | ±20V | 530 pF @ 75 V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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ISP98DP10LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
371 | 0.82 |
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Datasheet |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 930mA (Ta), 1.55A (Tc) | 4.5V, 10V | 980mOhm @ 900mA, 10V | 2V @ 165µA | 7.2 nC @ 10 V | ±20V | 350 pF @ 50 V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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