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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6716MTRPBFIRF6716 - 12V-300V N-CHANNEL POW Infineon Technologies |
26,497 | 1.78 |
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Datasheet |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59 nC @ 4.5 V | ±20V | 5150 pF @ 13 V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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SPI11N60C3XKSA1SPI11N60C3 - 600V COOLMOS N-CHAN Infineon Technologies |
2,500 | 0.00 |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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AUIRL3705NAUIRL3705 - 55V-60V N-CHANNEL AU Infineon Technologies |
600 | 1.39 |
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Datasheet |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | - | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | - | 3600 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRL1404ZSAUIRL1404ZS - 20V-40V N-CHANNEL Infineon Technologies |
1,000 | 1.56 |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPI60R250CPCOOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
474 | 1.57 |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262 |
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BSC0588NSIATMA1BSC0588- N-CHANNEL POWER MOSFET Infineon Technologies |
215,000 | 1.66 |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI65R190C6XKSA1IPI65R190C6 - 650V-700V COOLMOS Infineon Technologies |
999 | 1.93 |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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AUIRF4905LAUIRF4905 - 20V-150V P-CHANNEL A Infineon Technologies |
1,077 | 0.00 |
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Datasheet |
HEXFET® | TO-262 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
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SPA21N50C3XKSA1HIGH POWER_LEGACY Infineon Technologies |
1,520 | 0.00 |
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Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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AUIRFP1405AUIRFP1405 - 55V-60V N-CHANNEL A Infineon Technologies |
800 | 2.38 |
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Datasheet |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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