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Vishay Siliconix SI1025X-T1-GE3

Part No.:
SI1025X-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
Chuangxin CloudSI1025X-T1-GE3.pdf
Description:
MOSFET 2P-CH 60V 0.19A SC89
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
190mA
Rds On (Max) @ Id, Vgs:
4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
23pF @ 25V
Power - Max:
250mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-89 (SOT-563F)
Datasheet:
Chuangxin CloudSI1025X-T1-GE3.pdf

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The price and inventory of SI1025X-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of SI1025X-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI1025X-T1-GE3 we delivered, we will accept the replacement or return of the SI1025X-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI1025X-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SI1025X-T1-GE3 pin diagram, SI1025X-T1-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image SI1025X-T1-GE3
Part Number SI1025X-T1-GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 190mA
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SC-89 (SOT-563F)
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