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Toshiba Semiconductor and Storage TK10S04K3L(T6L1,NQ

Part No.:
TK10S04K3L(T6L1,NQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Chuangxin CloudTK10S04K3L(T6L1,NQ.pdf
Description:
MOSFET N-CH 40V 10A DPAK
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
Shipping

Product details

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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
U-MOSIV
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
410 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK+
Datasheet:
Chuangxin CloudTK10S04K3L(T6L1,NQ.pdf

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6. What is the process for return or replacement of TK10S04K3L(T6L1,NQ?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TK10S04K3L(T6L1,NQ we delivered, we will accept the replacement or return of the TK10S04K3L(T6L1,NQ only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK10S04K3L(T6L1,NQ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TK10S04K3L(T6L1,NQ pin diagram, TK10S04K3L(T6L1,NQ datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TK10S04K3L(T6L1,NQ
Part Number TK10S04K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIV
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 10 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK+
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