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STMicroelectronics STW26N65DM2

Part No.:
STW26N65DM2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
Chuangxin CloudSTW26N65DM2.pdf
Description:
MOSFET N-CH 650V 20A TO247
Quantity:

Unit Price:$0

Ext Price:$0

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Shipping:
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Manufacturer:
STMicroelectronics
Series:
MDmesh™ DM2
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35.5 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
170W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Datasheet:
Chuangxin CloudSTW26N65DM2.pdf

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We have a professional and experienced quality control team to strictly verify and test the STW26N65DM2. All suppliers must pass our qualification reviews before they can publish their products including STW26N65DM2 on Chuangxin Cloud; we pay more attention to the channels and quality of STW26N65DM2 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the STW26N65DM2 price and inventory displayed accurate?

The price and inventory of STW26N65DM2 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of STW26N65DM2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STW26N65DM2 we delivered, we will accept the replacement or return of the STW26N65DM2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STW26N65DM2.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STW26N65DM2 pin diagram, STW26N65DM2 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image STW26N65DM2
Part Number STW26N65DM2
Manufacturer STMicroelectronics
Series MDmesh™ DM2
Package/Case TO-247-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 100 V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
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