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STMicroelectronics STU11NM60ND

Part No.:
STU11NM60ND
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Chuangxin CloudSTU11NM60ND.pdf
Description:
MOSFET N-CH 600V 10A IPAK
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Product details

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Attribute value
Manufacturer:
STMicroelectronics
Series:
FDmesh™ II
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK
Datasheet:
Chuangxin CloudSTU11NM60ND.pdf

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3. Are the STU11NM60ND price and inventory displayed accurate?

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6. What is the process for return or replacement of STU11NM60ND?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STU11NM60ND we delivered, we will accept the replacement or return of the STU11NM60ND only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STU11NM60ND.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STU11NM60ND pin diagram, STU11NM60ND datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image STU11NM60ND
Part Number STU11NM60ND
Manufacturer STMicroelectronics
Series FDmesh™ II
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK
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