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Goford Semiconductor G20N06D52

Part No.:
G20N06D52
Manufacturer:
Goford Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
Chuangxin CloudG20N06D52.pdf
Description:
MOSFET 2N-CH 60V 20A 8DFN
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
Payment
Shipping:
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Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1326pF @ 30V
Power - Max:
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4.9x5.75)
Datasheet:
Chuangxin CloudG20N06D52.pdf

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6. What is the process for return or replacement of G20N06D52?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G20N06D52 we delivered, we will accept the replacement or return of the G20N06D52 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G20N06D52.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G20N06D52 pin diagram, G20N06D52 datasheet?

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Image G20N06D52 G20N06D52
Part Number G20N06D52 G20N06D52
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case 8-PowerTDFN 8-PowerTDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration - -
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 20A, 10V 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1326pF @ 30V 1326pF @ 30V
Power - Max 48W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN (4.9x5.75) 8-DFN (4.9x5.75)
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