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Cambridge GaN Devices CGD65B130SH2

Part No.:
CGD65B130SH2
Manufacturer:
Cambridge GaN Devices
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
Chuangxin CloudCGD65B130SH2.pdf
Description:
650V GAN HEMT, 130MOHM, DFN5X6.
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
Payment
Shipping:
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Product details

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Manufacturer:
Cambridge GaN Devices
Series:
ICeGaN™
Package/Case:
8-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
12A
Drive Voltage (Max Rds On, Min Rds On):
12V
Rds On (Max) @ Id, Vgs:
182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id:
4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs:
1.9 nC @ 12 V
Vgs (Max):
+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)
Datasheet:
Chuangxin CloudCGD65B130SH2.pdf

1. How to order CGD65B130SH2 on Chuangxin Cloud?

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2. How does Chuangxin Cloud guarantee that CGD65B130SH2 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the CGD65B130SH2. All suppliers must pass our qualification reviews before they can publish their products including CGD65B130SH2 on Chuangxin Cloud; we pay more attention to the channels and quality of CGD65B130SH2 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the CGD65B130SH2 price and inventory displayed accurate?

The price and inventory of CGD65B130SH2 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of CGD65B130SH2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the CGD65B130SH2 we delivered, we will accept the replacement or return of the CGD65B130SH2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of CGD65B130SH2.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as CGD65B130SH2 pin diagram, CGD65B130SH2 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image CGD65B130SH2
Part Number CGD65B130SH2
Manufacturer Cambridge GaN Devices
Series ICeGaN™
Package/Case 8-PowerVDFN
Packaging Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id 4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 12 V
Vgs (Max) +20V, -1V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DFN (5x6)
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