| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | IGBT Type | Configuration | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Power - Max | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | Operating Temperature | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                 
                 
                
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                    VS-GT75YF120UTECONO - 4 PACK IGBT Vishay General Semiconductor - Diodes Division  |  
                107 | 146.14 | 
                
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                - | Module | Box | Active | Trench Field Stop | Full Bridge | 1200 V | 118 A | 431 W | 2.6V @ 15V, 75A | 100 µA | - | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | - | 
                 
                 
                
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                    VS-GT90DA120USOT-227 - SINGLE SWITCH IGBT + A Vishay General Semiconductor - Diodes Division  |  
                2,882 | 39.14 | 
                
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                - | SOT-227-4, miniBLOC | Tube | Active | Trench Field Stop | Single | 1200 V | 169 A | 781 W | 2.6V @ 15V, 75A | 100 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | 
                 
                 
                
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                    VS-ENV020F65UPOWER MODULE Vishay General Semiconductor - Diodes Division  |  
                1,507 | 39.85 | 
                
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                     -  | 	
                
                * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                 
                
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                    VS-ENV020M120MPOWER MODULE Vishay General Semiconductor - Diodes Division  |  
                3,499 | 43.64 | 
                
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                     -  | 	
                
                * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                 
                
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                    VS-ENM040M60PPOWER MODULE Vishay General Semiconductor - Diodes Division  |  
                3,370 | 64.71 | 
                
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                     -  | 	
                
                * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                 
                
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                    VS-ENK025C65SPOWER MODULE Vishay General Semiconductor - Diodes Division  |  
                2,414 | 71.23 | 
                
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                     -  | 	
                
                * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                 
                
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                    VS-ENW30S120TPOWER MODULE Vishay General Semiconductor - Diodes Division  |  
                3,999 | 130.35 | 
                
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                     -  | 	
                
                * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                 
                
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                    VS-GT100TS065NMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division  |  
                3,052 | 0.00 | 
                
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                     -  | 	
                
                - | Module | Box | Active | Trench Field Stop | Half Bridge Inverter | 650 V | 96 A | 259 W | 2.3V @ 15V, 100A | 50 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT | 
                 
                 
                
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                    VS-GT100TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division  |  
                4,220 | 0.00 | 
                
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                     -  | 	
                
                FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 650 V | 247 A | 517 W | 1.32V @ 15V, 100A | 100 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT | 
                 
                 
                
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                    VS-GT150TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division  |  
                4,354 | 0.00 | 
                
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                     -  | 	
                
                FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 650 V | 372 A | 789 W | 1.32V @ 15V, 150A | 150 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |