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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT50M75JLLU2MOSFET N-CH 500V 51A SOT227 Microchip Technology |
4,818 | 32.42 |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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MSC015SMA070SSICFET N-CH 700V 126A D3PAK Microchip Technology |
1,193 | 39.18 |
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Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA (Typ) | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT10M11LVRGMOSFET N-CH 100V 100A TO264 Microchip Technology |
2,195 | 41.35 |
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Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
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MSC40SM120JCU2SICFET N-CH 1.2KV 55A SOT227 Microchip Technology |
2,761 | 47.67 |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSC017SMA120B4MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology |
2,869 | 49.34 |
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Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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APT58M80JMOSFET N-CH 800V 60A SOT227 Microchip Technology |
3,554 | 65.94 |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 60A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570 nC @ 10 V | ±30V | 17550 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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MSC70SM120JCU3SICFET N-CH 1.2KV 89A SOT227 Microchip Technology |
3,086 | 69.81 |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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APT10M19BVRGMOSFET N-CH 100V 75A TO247 Microchip Technology |
1,277 | 12.63 |
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Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 6120 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT5015BVFRGMOSFET N-CH 500V 32A TO247 Microchip Technology |
3,823 | 13.86 |
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Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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MSC040SMA120B4NMOSFET SIC 1200 V 40 MOHM TO-247 Microchip Technology |
4,932 | 0.00 |
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- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 71A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | 5V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1962 pF @ 1000 V | - | 372W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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