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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPB80N06S2L-07MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
8,805 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 4210 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA65R420CFDXKSA2MOSFET N-CH 650V 8.7A TO220 Infineon Technologies |
2,623 | 1.67 |
|
Datasheet |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
BSO303SPHXUMA1MOSFET P-CH 30V 7.2A 8DSO Infineon Technologies |
8,700 | 1.00 |
|
Datasheet |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | 2V @ 100µA | 54 nC @ 10 V | ±20V | 2330 pF @ 25 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
|
IRF7811WGTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
9,633 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | 1V @ 250µA | 33 nC @ 5 V | ±12V | 2335 pF @ 16 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRL40T209ATMA2TRENCH <= 40V Infineon Technologies |
2,200 | 0.00 |
|
Datasheet |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 100A, 10V | 2.4V @ 250µA | 269 nC @ 4.5 V | ±20V | 16000 pF @ 20 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
IRF3711ZPBFMOSFET N-CH 20V 92A TO220AB Infineon Technologies |
4,286 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24 nC @ 4.5 V | ±20V | 2150 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFU3303MOSFET N-CH 30V 33A IPAK Infineon Technologies |
9,455 | 0.00 |
|
Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
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IRFU120ZMOSFET N-CH 100V 8.7A IPAK Infineon Technologies |
3,486 | 0.00 |
|
Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
IRLU9343MOSFET P-CH 55V 20A I-PAK Infineon Technologies |
3,068 | 0.00 |
|
Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47 nC @ 10 V | ±20V | 660 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
IRF7470TRMOSFET N-CH 40V 10A 8SO Infineon Technologies |
2,883 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | 2V @ 250µA | 44 nC @ 4.5 V | ±12V | 3430 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SOIC |
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