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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLU014NMOSFET N-CH 55V 10A I-PAK Infineon Technologies |
7,119 | 0.00 |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRF7807D2MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,008 | 0.00 |
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Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6643TRPBFXTMA1TRENCH >=100V Infineon Technologies |
9,624 | 0.00 |
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- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric MZ |
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BUZ31MOSFET N-CH 200V 14.5A TO220-3 Infineon Technologies |
9,744 | 0.00 |
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Datasheet |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SI4435DYTRMOSFET P-CH 30V 8A 8SO Infineon Technologies |
9,505 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60 nC @ 10 V | ±20V | 2320 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPP040N06NXKSA1TRENCH 40<-<100V Infineon Technologies |
7,346 | 0.00 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.3V @ 50µA | 44 nC @ 10 V | ±20V | 3375 pF @ 30 V | - | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP086N10N3GHKSA1MOSFET N-CH 100V 80A TO220-3 Infineon Technologies |
9,778 | 0.00 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10 V | ±20V | 3980 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7404TRPBFMOSFET P-CH 20V 6.7A 8SO Infineon Technologies |
4,919 | 1.12 |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | ±12V | 1500 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7807TRPBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,046 | 1.00 |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7406GTRPBFMOSFET P-CH 30V 5.8A 8SO Infineon Technologies |
7,812 | 0.00 |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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