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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUCN04S7N019DATMA1MOSFET_(20V 40V) Infineon Technologies |
5,533 | 0.00 |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISP670P06NMAXTSA1ISP670P06NMAXTSA1 Infineon Technologies |
8,686 | 0.00 |
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Datasheet |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.7A (Ta), 6.4A (Tc) | 10V | 67mOhm @ 3.7A, 10V | 4V @ 1.037mA | 48 nC @ 10 V | ±20V | 1800 pF @ 30 V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT223-4-21 |
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IAUCN10S7N074ATMA1IAUCN10S7N074ATMA1 Infineon Technologies |
5,300 | 0.00 |
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OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 78A (Tj) | 7V, 10V | 7.4mOhm @ 39A, 10V | 3.2V @ 35µA | 27.9 nC @ 10 V | ±20V | 1950 pF @ 50 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
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IPP034N08N5XKSA1TRENCH 40<-<100V Infineon Technologies |
5,329 | 0.00 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6240 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP083N10N5AKSA1MOSFET N-CH 100V 73A TO220-3 Infineon Technologies |
3,287 | 1.00 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | 3.8V @ 49µA | 37 nC @ 10 V | ±20V | 2730 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IGT65R035D2ATMA1HV GAN DISCRETES Infineon Technologies |
4,294 | 0.00 |
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CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 49A (Tc) | - | - | 1.6V @ 4.2mA | 7.7 nC @ 3 V | -10V | 540 pF @ 400 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8 |
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IPTA60R180CM8XTMA1IPTA60R180CM8XTMA1 Infineon Technologies |
1,369 | 0.00 |
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CoolMOS™ | 4-PowerLSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tj) | 10V | 180mOhm @ 5.6A, 10V | 4.7V @ 140µA | 17 nC @ 10 V | ±20V | 743 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LHSOF-4-1 |
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IPDD60R180CM8XTMA1IPDD60R180CM8XTMA1 Infineon Technologies |
4,277 | 0.00 |
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CoolMOS™ | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tj) | 10V | 180mOhm @ 5.6A, 10V | 4.7V @ 140µA | 17 nC @ 10 V | ±20V | 743 pF @ 400 V | - | 169W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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IPB029N06N3GE8187ATMA1MOSFET N-CH 60V 120A D2PAK Infineon Technologies |
3,234 | 1.48 |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF150DM115XTMA1TRENCH >=100V DIRECTFET Infineon Technologies |
5,474 | 2.36 |
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- | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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