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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ73AINN-CHANNEL POWER MOSFET Infineon Technologies |
966 | 0.32 |
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Datasheet |
SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP230N06L3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | 0.33 |
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Datasheet |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 7 nC @ 4.5 V | ±20V | 1200 pF @ 30 V | - | 36W | -55°C ~ 175°C | - | - | Through Hole | PG-TO220-3 |
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SPB10N10LGN-CHANNEL POWER MOSFET Infineon Technologies |
993 | 0.39 |
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SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22 nC @ 10 V | ±20V | 444 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPS02N60C3MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies |
3,132 | 0.40 |
|
Datasheet |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPI80N04S3-06N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | 0.41 |
|
Datasheet |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPB03N60S5N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | 0.41 |
|
Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPF13N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
444 | 0.49 |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
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IPI04N03LAMOSFET N-CH 25V 80A TO262-3 Infineon Technologies |
9,467 | 0.49 |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRFH7110TRPBFMOSFET N-CH 100V 11A/58A 8PQFN Infineon Technologies |
5,516 | 0.50 |
|
Datasheet |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87 nC @ 10 V | ±20V | 3240 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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SPU30P06PMOSFET P-CH 60V 30A TO251-3 Infineon Technologies |
8,831 | 0.51 |
|
Datasheet |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48 nC @ 10 V | ±20V | 1535 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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