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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF1405ZLPBFMOSFET N-CH 55V 75A TO262 Infineon Technologies |
558 | 2.30 |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFU4510PBFMOSFET N-CH 100V 56A IPAK Infineon Technologies |
1,310 | 2.18 |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81 nC @ 10 V | ±20V | 3031 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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BUZ331N-CHANNEL POWER MOSFET Infineon Technologies |
215 | 2.28 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA037N08N3GXKSA1MOSFET N-CH 80V 75A TO220-FP Infineon Technologies |
5,654 | 4.99 |
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Datasheet |
OptiMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 6V, 10V | 3.7mOhm @ 75A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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AUIRL7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC Infineon Technologies |
4,780 | 1.00 |
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Datasheet |
HEXFET® | DirectFET™ Isometric SC | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 4.5V, 10V | 6.6mOhm @ 35A, 10V | 2.5V @ 50µA | 33 nC @ 4.5 V | ±16V | 2020 pF @ 25 V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET™ SC |
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IRFS4020TRLPBFMOSFET N-CH 200V 18A D2PAK Infineon Technologies |
784 | 2.36 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29 nC @ 10 V | ±20V | 1200 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPP100N08N3GXKSA1MOSFET N-CH 80V 70A TO220-3 Infineon Technologies |
358 | 2.26 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 70A (Tc) | 6V, 10V | 10mOhm @ 46A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2410 pF @ 40 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BTS247ZE3062ANTMA1N-CHANNEL POWER MOSFET Infineon Technologies |
80,650 | 2.46 |
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Datasheet |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | ±20V | 1730 pF @ 25 V | - | 120W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
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BSF134N10NJ3GXUMA1MOSFET N-CH 100V 9A/40A 2WDSON Infineon Technologies |
4,971 | 1.00 |
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Datasheet |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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SPW20N60C3E8177FKSA1MOSFET N-CH Infineon Technologies |
2,272 | 2.52 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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