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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFR120ZMOSFET N-CH 100V 8.7A DPAK Infineon Technologies |
6,112 | 4974.00 |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 25µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPS65R400CEAKMA1CONSUMER Infineon Technologies |
3,410 | 0.49 |
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Datasheet |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15.1A (Tc) | 10V | 400mOhm @ 3.2435A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 118W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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BUZ100S-E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
28,500 | 0.51 |
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Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPF05N03LAGN-CHANNEL POWER MOSFET Infineon Technologies |
22,500 | 0.51 |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2V @ 50µA | 25 nC @ 5 V | ±20V | 3110 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
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BSP299L6327HUSA1MOSFET N-CH 500V 400MA SOT223-4 Infineon Technologies |
8,061 | 0.51 |
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Datasheet |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSF024N03LT3GN-CHANNEL POWER MOSFET Infineon Technologies |
9,963 | 0.51 |
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Datasheet |
OptiMOS™ 3 | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 106A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.2V @ 250µA | 71 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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IRLML6302GTRPBFMOSFET P-CH 20V 780MA SOT23-3 Infineon Technologies |
3,028 | 0.00 |
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Datasheet |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6 nC @ 4.5 V | ±12V | 97 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
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BUZ100SN-CHANNEL POWER MOSFET Infineon Technologies |
2,483 | 0.51 |
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Datasheet |
SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 77A (Tc) | 10V | 15mOhm @ 55A, 10V | 4V @ 130µA | 100 nC @ 10 V | ±20V | 2375 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD30N08S2-22MOSFET N-CH 75V 30A TO252-3 Infineon Technologies |
2,859 | 0.51 |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 30A (Tc) | 10V | 21.5mOhm @ 25A, 10V | 4V @ 80µA | 57 nC @ 10 V | ±20V | 1950 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPL65R1K5C6SATMA1MOSFET N-CH 650V 3A THIN-PAK Infineon Technologies |
4,878 | 1.00 |
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Datasheet |
CoolMOS™ C6 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 11 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-2 |
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