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FET, MOSFET Arrays

制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSCSM70HM038AG

MSCSM70HM038AG

MOSFET 4N-CH 700V 464A

Microchip Technology

8,657 827.60
RFQ
MSCSM70HM038AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 0.00
RFQ
MSCSM120VR1M062CT6AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM063AG

MSCSM120HM063AG

MOSFET 4N-CH 1200V 333A

Microchip Technology

5,753 904.58
RFQ
MSCSM120HM063AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

6,532 0.00
RFQ
MSCSM120VR1M16CTPAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM11TPAG

MSCSM120TAM11TPAG

MOSFET 6N-CH 1200V 251A

Microchip Technology

5,406 992.81
RFQ
MSCSM120TAM11TPAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027T6AG

MSCSM120AM027T6AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

8,830 993.20
RFQ
MSCSM120AM027T6AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027D3AG

MSCSM120AM027D3AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

5,173 1062.66
RFQ
MSCSM120AM027D3AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

MOSFET 2N-CH 1200V 805A

Microchip Technology

2,067 1165.22
RFQ
MSCSM120AM03T6LIAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

MOSFET 2N-CH 1200V 947A

Microchip Technology

8,818 1353.56
RFQ
MSCSM120AM02T6LIAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

MOSFET 2N-CH 1200V 733A D3

Microchip Technology

3,073 1390.87
RFQ
MSCSM120AM027CD3AG

Datasheet

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
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